PART |
Description |
Maker |
RT3YB7M |
Composite Transistor For Muting Application
|
Isahaya Electronics Corporation
|
2SD2654TL |
NPN High hFE & Muting Transistor
|
ROHM
|
2SC3327 2SC3327B |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | SPAK TRANSISTOR SILICON NPN EPITAXIAL TYPE FOR MUTING AND SWITCHING APPLICATIONS
|
TOSHIBA
|
CP-SNT55W |
Swi tchmode power suppl ies 瑞东tchmode权力suppl载体
|
Electronic Theatre Controls, Inc.
|
2SC4919 |
NPN Epitaxial Planar Silicon Transistor Muting Circuit Applications
|
SANYO
|
RT2N65M |
Composite Transistor For Muting Application Silicon NPN Epitaxial Type
|
Isahaya Electronics Corporation
|
2SC523203 2SC5232 |
Transistor Silicon NPN Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application
|
Toshiba Semiconductor
|
2SA1953 |
Transistor Silicon PNP Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application
|
TOSHIBA
|
2SC5233 |
Transistor Silicon NPN Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application
|
TOSHIBA
|
2SA1955 |
Transistor Silicon PNP Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application
|
TOSHIBA
|
KRC281S KRC286S KRC282S KRC283S KRC285S KRC284S |
Built in Bias Resistor (KRC281S - KRC286S) EPITAXIAL PLANAR NPN TRANSISTOR EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING)
|
KEC Holdings Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
2SC5376F |
Transistor Silicon NPN Epitaxial Type Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications
|
TOSHIBA
|